View RND030N20_8864152.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

datasheet www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. RND030N20 nch 200v 3.0a power mosfet junction temperature t j 150 c range of storage temperature t stg ? 55 to ? 150 c gate - source voltage v gss ? 30 v p d 20 w mj a e as *3 i ar *3 0.73 1.5 p d 0.85 w avalanche energy, single pulse avalanche current t c = 25c t a = 25c *4 power dissipation pulsed drain current i d,pulse *2 ? 6.0 a t c = 25c t c = 100c continuous drain current i d *1 a ? 3.0 i d *1 ? 1.6 a drain - source voltage v dss 200 v automotive solenoid drive taping code tl marking n03n20 ? absolute maximum ratings (t a = 25c) parameter symbol value unit 6) 100% avalanche tested ? packaging specifications type packaging taping ? application reel size (mm) 330 switching power supply tape width (mm) 16 automotive motor drive basic ordering unit (pcs) 2,500 ? features ? inner circuit 1) low on-resistance. 2) fast switching speed. 3) drive circuits can be simple. 4) parallel use is easy. 5) pb-free lead plating ; rohs compliant ? outline v dss 200v cpt3 (sc-63) r ds(on) (max.) 870m ? i d 3.0a p d 20w ? 1 esd protection diode ? 2 body diode (1) gate (2) drain (3) source (1) (3) (2) * 1 * 2 (1) (2) (3) 1/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 thermal resistance, junction - case m ? v gs = 10v, i d = 1.5a t j = 125c forward transfer admittance v ds = 10v, i d = 1.5a 0.75 1.50 - s static drain - sourceon - state resistance v gs = 10v, i d = 1.5a - 620 870 - 1150 ? 10 na t j = 125c v gate threshold voltage v gs (th) v ds = 10v, i d = 1ma 3.2 - 5.2 gate - source leakage current i gss v gs = ? 30v, v ds = 0v -- ? a min. typ. max. c v 200 - - - - 265 - 6.25 c/w - - c/w 147 - values unit min. typ. max. g fs v ds = 200v, v gs = 0v t j = 25c v ds = 200v, v gs = 0v ? thermal resistance parameter symbol symbol conditions v gs = 0v, i d = 1ma t sold thermal resistance, junction - ambient *4 soldering temperature, wavesoldering for 10s r thja r thjc 1610 r ds(on) *5 ? electrical characteristics (t a = 25c) parameter drain - source breakdown voltage zero gate voltage drain current v (br)dss i dss -- -1 0 - 100 values unit 2/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 *1 limited only by maximum temperature allowed. *2 pw ? 10 ? s, duty cycle ? 1% *3 l ? 500 ? h, v dd = 50v, rg = 25 ? , starting t j = 25c *4 mounted on a epoxy pcb fr4 (20mm 30mm 0.8mm) *5 pulsed - -v i d = 3.0a v gs = 10v -2 . 7- gate - drain charge q gd *5 -2 . 4- nc gate - source charge q gs *5 total gate charge q g *5 v dd ? 100v - - ? gate charge characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. turn - on delay time t d(on) *5 v dd ? 100v, v gs = 10v -1 3- ns rise time t r *5 i d = 1.5a -1 3- turn - off delay time t d(off) *5 r l = 12 ? -1 8- fall time t f *5 r g = 10 ? -1 7 pf output capacitance c oss v ds = 25v -3 0- reverse transfer capacitance c rss f = 1mhz input capacitance c iss v gs = 0v - 270 - -1 0- ? electrical characteristics (t a = 25c) parameter symbol conditions values unit min. typ. max. nc 6.0 a forward voltage v sd *5 v gs = 0v, i s = 3.0a --1 . 5v 55 - ns t c = 25c reverse recovery time t rr *5 i s *1 --3 . 0a pulsed source current i sm *2 -- continuous source current 6.7 - i s = 1.5a di/dt = 100a/ ? s reverse recovery charge q rr *5 -1 1- ? body diode electrical characteristics (source-drain)(t a = 25c) parameter symbol conditions values unit min. typ. max. gate plateau voltage v (plateau) v dd ? 100v, i d = 3a -7 . 2 3/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 ? electrical characteristic curves 0 20 40 60 80 100 120 0 25 50 75 100 125 150 175 0.01 0.1 1 10 0.0001 0.01 1 100 t a =25oc single pulser th(j-c)(t) = r (t) r th(ch-c) r th(j-c) = 147oc/w top d = 1 d = 0.5 d = 0.1 d = 0.05 d = 0.01 d = single 0.01 0.1 1 10 100 0.1 1 10 100 1000 t a =25oc single pulse p w = 100 ? s p w = 1ms p w = 10ms operation in this area is limited by r ds(on) fig.1 power dissipation derating curve fig.2 maximum safe operating area power dissipation : p d /p d max. [%] drain current : i d [a] fig.3 normalized transient thermal resistance vs. pulse width normalized transient thermal resistance : r (t) pulse width : p w [s] junction temperature : t j [ c] drain - source voltage : v ds [v] 4/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 ? electrical characteristic curves 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.2 0.4 0.6 0.8 1 v gs =6.0v t a =25oc pulsed v gs =8.0v v gs =10.0v v gs =7.0v 0 0.5 1 1.5 2 2.5 3 024681 0 v gs =6.0v v gs =10.0v v gs =8.0v v gs =7.0v t a =25oc pulsed 0.1 1 10 0.01 0.1 1 10 100 v dd =50v,r g =25 ? v gf =10v,v gr =0v starting t ch =25oc 0 20 40 60 80 100 120 0 255075100125150175 fig.6 typical output characteristics(i) drain current : i d [a] drain - source voltage : v ds [v] fig.7 typical output characteristics(ii) drain current : i d [a] drain - source voltage : v ds [v] fig.4 avalanche current vs inductive load avalanche current : i as [a] coil inductance : l [mh] fig.5 avalanche energy derating curve vs junction temperature avalanche energy : e as / e as max. [%] junction temperature : t j [ c] 5/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 ? electrical characteristic curves 180 190 200 210 220 230 240 250 260 270 280 -50 0 50 100 150 v gs = 0v i d = 1ma 0.001 0.01 0.1 1 10 012345678910 v ds = 10v t a = 125oc t a = 75oc t a = 25oc t a = ? 25oc 2.5 3.0 3.5 4.0 4.5 5.0 -50-25 0 255075100125150 v ds = 10v i d = 1ma 0.01 0.1 1 10 0.01 0.1 1 10 v ds = 10v t a = ? 25oc t a =25oc t a =75oc t a =125oc fig.10 gate threshold voltage vs. junction temperature gate threshold voltage : v gs(th) [v] junction temperature : t j [ c] fig.11 transconductance vs. drain current transconductance : g fs [s] drain current : i d [a] fig.8 breakdown voltage vs. junction temperature junction temperature : t j [ c] fig.9 typical transfer characteristics gate - source voltage : v gs [v] drain current : i d [a] normarize drain - source breakdown voltage : v (br)dss [v] 6/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 ? electrical characteristic curves 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0 2 4 6 8 101214161820 i d = 1.5a i d = 3a t a =25oc 100 1000 10000 0.01 0.1 1 10 t a =25oc v gs = 10v 0 200 400 600 800 1000 1200 1400 1600 1800 2000 -50 0 50 100 150 v gs = 10v i d = 1.5a fig.13 static drain - source on - state resistance vs. drain current(i) static drain - source on-state resistance : r ds(on) [m ? ] junction temperature : t j [oc] fig.14 static drain - source on - state resistance vs. junction temperature static drain - source on-state resistance : r ds(on) [m ? ] drain current : i d [a] fig.12 static drain - source on - state resistance vs. gate source voltage static drain - source on-state resistance : r ds(on) [m ? ] gate - source voltage : v gs [v] 7/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 ? electrical characteristic curves 0 20 40 60 80 100 120 0 255075100125150175 100 1000 10000 0.01 0.1 1 10 t a =125oc t a =75oc t a =25oc t a = ? 25oc v gs = 10v fig.15 static drain - source on - state resistance vs. drain current(ii) static drain - source on-state resistance : r ds(on) [m ? ] drain current : i d [a] fig.16 drain current derating curve drain current dissipation : i d /i d max. (%) junction temperature : t j [ c] 8/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 ? electrical characteristic curves 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 c oss c rss c iss t a = 25oc f = 1mhz v gs = 0v 1 10 100 1000 10000 0.01 0.1 1 10 t r t f t d(on) t d(off) t a =25oc v dd = 100v v gs = 10v r g =10 ? 0 2 4 6 8 10 12 14 16 18 20 0 5 10 15 t a =25oc v dd = 100v i d = 3a r g =10 ? fig.17 typical capacitance vs. drain - source voltage capacitance : c [pf] drain - source voltage : v ds [v] fig.19 dynamic input characteristics gate - source voltage : v gs [v] total gate charge : q g [nc] fig.18 switching characteristics switching time : t [ns] drain current : i d [a] 9/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 ? electrical characteristic curves 10 100 1000 0.1 1 10 t a =25oc di / dt = 100a / ? s v gs = 0v 0.01 0.1 1 10 0.0 0.5 1.0 1.5 t a =125oc t a =75oc t a =25oc t a = ? 25oc v gs =0v fig.20 source current vs. source - drain voltage source current : i s [a] source-drain voltage : v sd [v] fig21 reverse recovery time vs.source current reverse recovery time : trr [ns] source current : i s [a] 10/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 ? measurement circuits fig.1-1 switching time measurement circuit fig.1-2 switching waveforms fig.2-1 gate charge measurement circuit fig.2-2 gate charge waveform fig.3-1 avalanche measurement circuit fig.3-2 avalanche waveform v gs i g(const.) v ds d.u.t. i d r l v dd 90% 90% 90% 10% 10% 50% 10% 50% v gs pulse width v ds t on t off t r t d(on) t f t d(off) v gs r g v ds d.u.t. i d r l v dd v g v gs charge q g q gs q gd v gs r g v ds d.u.t. i as lv dd i as v dd v (br)dss i as 2 l e as = v (br)dss - v dd v (br)dss 12 11/12 2012.08 - rev.a downloaded from: http:///
www.rohm.com ? 201 4 rohm co., ltd. all rights reserved. data sheet RND030N20 ? dimensions (unit : mm) dimension in mm/inches cpt3 e p x l l l e x x e p x x x 12/12 2012.08 - rev.a downloaded from: http:///
r1102 a www.rohm.com ? 2014 rohm co., ltd. all rights reserved. notice rohm customer support system http://www.rohm.com/contact/ thank you for your accessing to rohm product informations. more detail product informations and catalogs are available, please contact us. notes the information contained herein is subject to change without notice. before you use our products, please contact our sales representati ve and verify the latest specifica- tions : although rohm is continuously working to improve product reliability and quality, semicon- ductors can break down and malfunction due to various factors. therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. rohm shall have no responsibility for any damages arising out of the use of our poducts beyond the rating specified by rohm. examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the products. the peripheral conditions must be taken into account when designing circuits for mass production. the technical information specified herein is intended only to show the typical functions of and examples of application circuits for the products. rohm does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by rohm or any other parties. rohm shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. the products are intended for use in general electronic equipment (i.e. av/oa devices, communi- cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in this document. the products specified in this document are not designed to be radiation tolerant. for use of our products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a rohm representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. do not use our products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. rohm shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. rohm has used reasonable care to ensur the accuracy of the information contained in this document. however, rohm does not warrants that such information is error-free, and rohm shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. please use the products in accordance with any applicable environmental laws and regulations, such as the rohs directive. for more details, including rohs compatibility, please contact a rohm sales office. rohm shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. when providing our products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the us export administration regulations and the foreign exchange and foreign trade act. this document, in part or in whole, may not be reprinted or reproduced without prior consent of rohm. 1) 2) 3) 4) 5) 6) 7) 8) 9) 10)11) 12) 13) 14) downloaded from: http:///

▲Up To Search▲

Price & Availability of RND030N20

	To Download RND030N20 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .